Esta es una lista de plantas de fabricación de semiconductores . Una planta de fabricación de semiconductores es donde se fabrican los circuitos integrados (CI), también conocidos como microchips . Son operados por Fabricantes de Dispositivos Integrados (IDM) que diseñan y fabrican circuitos integrados internamente y también pueden fabricar diseños de solo diseño ( firmas sin fábricas ), o por fundiciones Pure Play , que fabrican diseños de compañías sin fábricas y no diseñan sus propios CI. Algunas fundiciones Pure Play como TSMC ofrecen servicios de diseño de circuitos integrados, y otras, como Samsung, diseñan y fabrican circuitos integrados para los clientes, al mismo tiempo que diseñan, fabrican y venden sus propios circuitos integrados.
Glosario de términos
- Tamaño de oblea: diámetro de oblea más grande que una instalación es capaz de procesar. (Las obleas semiconductoras son circulares).
- Nodo de tecnología de proceso : tamaño de las características más pequeñas que la instalación es capaz de grabar en las obleas
- Capacidad de producción : la capacidad nominal de una instalación de fabricación. Generalmente el máximo de obleas producidas por mes
- Utilización: el número de obleas que procesa una planta de fabricación en relación con su capacidad de producción.
- Tecnología / Productos: tipo de producto que la instalación es capaz de producir, ya que no todas las plantas pueden producir todos los productos del mercado.
Plantas abiertas
Las fábricas operativas incluyen:
Empresa | Nombre de planta | Ubicación de la planta | Costo de la planta (en miles de millones de dólares estadounidenses ) | Producción iniciada | Tamaño de la oblea (mm) | Nodo de tecnología de proceso ( nm ) | Capacidad de producción (obleas / mes) | Tecnología / Productos |
---|---|---|---|---|---|---|---|---|
LABORATORIOS HTE | LABORATORIOS HTE | EE.UU , San José, CA | 0,005 | 2009 | 100, 150 | 4000–1000 | 1.000 | Fundición de obleas Pure Play: BIPOLAR, BICMOS, CMOS, MEMS www.htelabs.com |
UMC - He Jian | Fabuloso 8N | porcelana | 0,750, [1] 1,2, +0,5 | Mayo de 2003 [1] | 200 | 4000–1000, 500, 350, 250, 180, 110 | 77.000 | Fundición |
UMC | Fabuloso 6A | Taiwán , Hsinchu | 0,35 [1] | 1989 [1] | 150 | 450 | 31.000 | Fundición |
UMC | Fabuloso 8AB | Taiwán , Hsinchu | 1 [1] | 1995 [1] | 200 | 250 | 67.000 [2] | Fundición |
UMC | Fabuloso 8C | Taiwán , Hsinchu | 1 [1] | 1998 [1] | 200 | 350-110 | 37.000 | Fundición |
UMC | Fabuloso 8D | Taiwán , Hsinchu | 1,5 [1] | 2000 [1] | 200 | 90 | 31.000 | Fundición |
UMC | Fabuloso 8E | Taiwán , Hsinchu | 0,96 [1] | 1998 [1] | 200 | 180 | 37.000 | Fundición |
UMC | Fabuloso 8F | Taiwán , Hsinchu | 1,5 [1] | 2000 [1] | 200 | 150 | 40.000 | Fundición |
UMC | Fab 8S | Taiwán , Hsinchu | 0,8 [1] | 2004 [1] | 200 | 350–250 | 31.000 | Fundición |
UMC | Fabuloso 12A | Taiwán , Tainan | 4.65, 4.1, 6.6, 7.3 [1] | 2001, 2010, 2014, 2017 [1] | 300 | 28, 14 | 87.000 [2] | Fundición |
UMC | Fabuloso 12i | Singapur | 3.7 [1] | 2004 [1] | 300 | 130–40 | 53.000 | Fundición |
UMC - United Semiconductor | Fabuloso 12X | porcelana , Xiamen | 6.2 | 2016 | 300 | 55-28 | 19.000-25.000 (2021) | Fundición |
UMC - USJC (antes MIFS) (antes Fujitsu ) | Fab 12M (instalaciones originales de Fujitsu) [3] | Japón , Mie | 1974 | 150, 200, 300 [4] | 90–40 | 33.000 | Fundición | |
Instrumentos Texas | FFAB | Alemania , Freising | 200 | 1000-180 | ||||
Texas Instruments (anteriormente National Semiconductor ) | MFAB [5] | EE.UU , YO, South Portland | .932 | 1997 | 200 | 350 , 250 , 180 | ||
Instrumentos Texas | RFAB | EE.UU , TX, Richardson | 2009 | 300 | 180, 130 | BiCMOS | ||
Instrumentos Texas | DMOS6 | EE.UU , TX, Dallas | 300 | 130–65, 45 | ||||
Instrumentos Texas | DMOS5 | EE.UU , TX, Dallas | 200 | 180 | BiCMOS | |||
Instrumentos Texas | DFAB | EE.UU , TX, Dallas | 1964 | 150/200 | 1000–500 | |||
Instrumentos Texas | SFAB | EE.UU , TX, Sherman | 150 | 2000–1000 | ||||
Instrumentos Texas | MIHO8 | Japón , Miho | 200 | 350–250 | BiCMOS | |||
Texas Instruments (anteriormente Spansion ) | Aizu | Japón , Aizu | 200 | 110 | ||||
Texas Instruments (anteriormente SMIC - Cension) | Chengdu (CFAB) | porcelana , Chengdu | 200 | |||||
Tsinghua Unigroup [6] | porcelana , Nanjing | 10 (primera fase), 30 | Planificado | 300 | 100,000 (primera fase) | Flash NAND 3D | ||
Tsinghua Unigroup [6] | porcelana , Chengdu | 28 | Planificado | 300 | 500 000 | Fundición | ||
Tsinghua Unigroup - XMC (antes Xinxin) [7] | Fabuloso 1 | porcelana , Wuhan [1] | 1,9 | 2008 | 300 | 90, 65, 60, 50, 45, 40, 32 | 30.000 [8] | Fundición, NOR |
Tsinghua Unigroup - Yangtze Memory Technologies (YMTC) - XMC (antes Xinxin) [7] [8] [6] | Fabuloso 2 | porcelana , Wuhan | 24 | 2018 [1] | 300 | 20 | 200.000 | NAND 3D |
SMIC | S1 Mega Fab (S1A / S1B / S1C) [9] | porcelana , Shanghái | 200 | 350 - 90 | 114.000 [10] | Fundición | ||
SMIC | S2 (Fab 8) [9] | porcelana , Shanghái | 300 | 45 / 40- 32 /28 | 20.000 [10] | Fundición | ||
SMIC - SMSC | SN1 [9] | porcelana , Shanghái | 10 (esperado) | (planificado) | 300 | 12 / 14 | 70.000 [7] | Fundición |
SMIC | B1 Mega Fab (Fab 4, Fab 6) [9] | porcelana , Beijing | 2004 | 300 | 180 - 90 / 55 | 50.000 [10] | Fundición | |
SMIC | B2A [9] | porcelana , Beijing | 3,59 [11] | 2014 | 300 | 45 / 40- 32 /28 | 35.000 [10] | Fundición |
SMIC | Fantástico 7 [9] | porcelana , Tianjin | 2004 | 200 | 350 - 90 | 50.000 [10] | Fundición | |
SMIC | Fab 15 [9] | porcelana , Shenzhen | 2014 | 200 | 350 - 90 | 50.000 [10] | Fundición | |
SMIC | SZ (Fab 16A / B) [9] | porcelana , Shenzhen | 2019 | 300 | 8 / 14 | 40.000 [7] | Fundición | |
SMIC [7] | B3 | porcelana , Beijing | 7,6 | Bajo construcción | 300 | 35.000 | Fundición | |
Wuxi Xichanweixin (antes SMIC - LFoundry (antes LFoundry ) (antes Micron ) [12] (antes Texas Instruments ) | )LF | Italia , Avezzano | 1995 | 200 | 180 - 90 | 50.000 | ||
Nanya | Fabuloso | Taiwán | 199x | 300 | DRACMA | |||
Nanya | Fabuloso 2 | Taiwán , Linkou | 0,8 | 2000 | 200 [13] | 175 | 30.000 | DRACMA |
Nanya | Fabuloso 3A [14] | Taiwán , Nueva ciudad de Taipei [15] | 1,85 [16] | 2018 | 300 | 20 | DRACMA | |
Micrón | Fabuloso 1 | EE.UU , VA, Manassas | 1981 | 300 | DRACMA | |||
Micron (anteriormente IM Flash ) | Fab 2 IMFT | EE.UU , UT, Lehi | 300 | 25 [17] | 70.000 | DRAM, 3D XPoint | ||
Micrón | Fantástico 4 [18] | EE.UU , ID, Boise | 300 | RnD | ||||
Micron (anteriormente Dominion Semiconductor) | Fabuloso 6 | EE.UU , VA, Manassas | 1997 | 300 | 25 [17] | 70.000 | DRAM, NAND FLASH , NI | |
Micron (anteriormente TECH Semiconductor) | Fab 7 (anteriormente TECH Semiconductor, Singapur) [19] | Singapur | 300 | 60.000 | NAND FLASH | |||
Micron (anteriormente IM Flash ) [20] | Fabuloso 10 [21] | Singapur | 3 | 2011 | 300 | 25 | 100.000 | NAND FLASH |
Micron (anteriormente Inotera ) | Fabuloso 11 [22] | Taiwán , Taoyuan | 300 | 20 y menos | 80.000 | DRACMA | ||
Micrón | Fabuloso 13 [23] | Singapur | 200 | NI | ||||
Micrón | Singapur [24] | 200 | NOR Flash | |||||
Micrón | Micron Semiconductor Asia | Singapur [24] | ||||||
Micrón | porcelana , Xi'an [24] | |||||||
Micron (anteriormente Elpida Memory ) | Fab 15 (anteriormente Elpida Memory, Hiroshima) [18] [24] | Japón , Hiroshima | 300 | 20 y menos | 100.000 | DRACMA | ||
Micron (anteriormente Rexchip) | Fab 16 (anteriormente Rexchip, Taichung) [18] | Taiwán , Taichung | 300 | 30 y menos | 80.000 | DRAM, FEOL | ||
Micron (anteriormente Cando) | Micron Memory Taiwán [24] | Taiwán , Taichung | ?, 2018 | 300 | DRAM, BEOL | |||
Micrón | A3 | Taiwán , Taichung [25] | Bajo construcción | 300 | DRACMA | |||
Intel | D1B | EE.UU , Oregón, Hillsboro | 1996 | 300 | 10 / 14 /22 | Microprocesadores [26] | ||
Intel | D1C [27] [26] | EE.UU , Oregón, Hillsboro | 2001 | 300 | 10 / 14 /22 | Microprocesadores [26] | ||
Intel | D1D [27] [26] | EE.UU , Oregón, Hillsboro | 2003 | 300 | 7 / 10 / 14 | Microprocesadores [26] | ||
Intel | D1X [28] [26] | EE.UU , Oregón, Hillsboro | 2013 | 300 | 7 / 10 / 14 | Microprocesadores [26] | ||
Intel | Fab 12 [27] [26] | EE.UU , AZ, Chandler | 1996 | 300 | 14 / 22 / 65 | Microprocesadores y conjuntos de chips [26] | ||
Intel | Fab 32 [27] [29] | EE.UU , AZ, Chandler | 3 | 2007 | 300 | 45 | ||
Intel | Fab 32 [27] [26] | EE.UU , AZ, Chandler | 2007 | 300 | 22 de / 32 | Microprocesadores [26] | ||
Intel | Fab 42 [30] [31] [26] | EE.UU , AZ, Chandler | 10 [32] | 2020 [33] | 300 | 7 / 10 | Microprocesadores [26] | |
Intel | 2, desconocido [34] [35] | EE.UU , AZ, Chandler | 20 [34] | 2024 [34] | Microprocesadores [34] | |||
Intel | Fab 11x [27] [26] | EE.UU , Nuevo México, Rio Rancho | 2002 | 300 | 32 / 45 | Microprocesadores [26] | ||
Intel (antes Micron ) (antes Numonyx ) (antes Intel ) | Fab 18 [36] | Israel , Kiryat Gat | 1996 | 200, 300 | 45 / 65 /90/180 | Microprocesadores y conjuntos de chips, [37] flash NOR | ||
Intel | Fab 10 [27] | Irlanda , Leixlip | 1994 | 200 | ||||
Intel | Fantástico 14 [27] | Irlanda , Leixlip | 1998 | 200 | ||||
Intel | Fab 24 [27] [26] | Irlanda , Leixlip | 2004 | 300 | 14 / 65 / 90 [38] | Microprocesadores, conjuntos de chips y comunicaciones [26] | ||
Intel | Fab 28 [27] [26] | Israel , Kiryat Gat | 2008 | 300 | 10 / 22 / 45 | Microprocesadores [26] | ||
Intel | Fab 68 [27] [39] | porcelana , Dalian | 2.5 | 2010 | 300 | 65 [40] | 30.000–52.000 | Microprocesadores (antes), VNAND [26] |
Intel | Costa Rica , Heredia, Belén | 1997 | 300 | 14 / 22 de | embalaje | |||
Microtecnología INEX | Reino Unido , Inglaterra, Newcastle upon Tyne | 2014 | 150 | Fundición | ||||
Participaciones de componentes de General Motors | Fabuloso III | EE.UU , EN, Kokomo | 125/200 | 500+ | ||||
Raytheon Systems Ltd | Reino Unido , Escocia, Glenrothes | 1960 | 100 | CMOS sobre SiC, fundición | ||||
BAE Systems (anteriormente Sanders ) | EE.UU , NH, Nashua [1] | 1985 [1] | 100, 150 | 140, 100, 70, 50 | MMIC , GaAs , GaN-on-SiC, fundición | |||
Flir Systems | EE.UU , CA, Santa Bárbara [41] | 150 | Detectores de infrarrojos , sensores de imágenes térmicas | |||||
Qorvo (anteriormente RF Micro Devices ) | EE.UU , Carolina del Norte, Greensboro [42] | 100,150 | 500 | 8.000 | Filtros SAW , GaAs HBT , GaAs pHEMT , GaN | |||
Qorvo (anteriormente TriQuint Semiconductor ) (anteriormente Micron ) (anteriormente Texas Instruments ) (anteriormente TwinStar Semiconductor) | EE.UU , TX, Richardson [42] | 0,5 | 1996 | 100, 150, 200 | 350, 250, 150, 90 | 8.000 | DRAM (anterior), filtros BAW , amplificadores de potencia , GaAs pHEMT , GaN-on-SiC | |
Qorvo (anteriormente TriQuint Semiconductor ) | EE.UU , Oregón, Hillsboro [42] | 100, 150 | 500 | Amplificadores de potencia, GaAs | ||||
Apple (antes Maxim ) (antes Samsung ) | X3 [43] | EE.UU , CA, San José | ?, 1997, 2015 [44] | 600–90 | ||||
Dispositivos analógicos | Quintilla cómica | Irlanda , Limerick | 200 | |||||
Dispositivos analógicos | Wilmington | EE.UU , MA, Wilmington | 200/150 | |||||
Dispositivos analógicos (anteriormente tecnología lineal ) | Hillview | EE.UU , CA, Milipitas | 150 | |||||
Dispositivos analógicos (anteriormente tecnología lineal ) | Camas | EE.UU , WA, Camas | 150 | |||||
Máxima | MaxFabNorth [45] | EE.UU , O, Beaverton | ||||||
ISRO | SCL [46] | India , Chandigarh | 2006 | 200 | 180 | MEMS, CMOS, CCD, NS | ||
ESTRELLA-C [47] [48] | MEMS [49] | India , Bangalore | 1996 | 150 | 1000– 500 | MEMS | ||
ESTRELLA-C [50] [51] | CMOS [52] | India , Bangalore | 1996 | 150 | 1000– 500 | CMOS | ||
GAETEC [53] [54] | GaAs [55] | India , Hyderabad | 1996 | 150 | 700– 500 | MESFET | ||
Tower Semiconductor (antes Maxim ) (antes Philips ) (antes VLSI ) | Fabuloso 9 [56] [57] | EE.UU , TX, San Antonio | 2003 | 200 | 180 | Fundición, Al BEOL , Energía, RF Analógica | ||
Tower Semiconductor (anteriormente National Semiconductor ) | Fabuloso 1 [58] | Israel , Migdal Haemek | 0,235 [1] | 1989, 1986 [1] | 150 | 1000– 350 | 14.000 | Fundición, BEOL planarizado, W y óxido CMP , CMOS , CIS, potencia, potencia discreta |
Semiconductor de torre | Fabuloso 2 [58] | Israel , Migdal Haemek | 1.226 [1] | 2003 | 200 | 180- 130 | 51.000 [1] | Fundición, Cu y Al BEOL, EPI, Escáner de 193 nm, CMOS, CIS, Energía, Energía discreta , MEMS , RFCMOS |
Tower Semiconductor (anteriormente Jazz Technologies ) (anteriormente Conexant ) (anteriormente Rockwell ) | Fantástico 3, [58] Newport Beach [1] | EE.UU , CA, playa de Newport | 0.165 [1] | 1967, 1995 [1] | 200 | 130–500 | 25.000 [1] | Fundición, Al BEOL, SiGe , EPI |
Semiconductor de torre - TPSCo (anteriormente Panasonic ) | Fab 5, [58] Tonami [59] | Japón , Tonami | 1994 | 200 | 500-130 | Fundición, analógica / mixta: señal , potencia, discreta, NVM , CCD | ||
Semiconductor de torre - TPSCo (anteriormente Panasonic ) | Fabuloso 7, [58] Uozu [59] | Japón , Uozu | 1984 | 300 | 65 . 45 | Fundición, CMOS, CIS, RF SOI , Señal analógica / mixta | ||
Semiconductor de torre - TPSCo (anteriormente Panasonic ) | Fab 6, [58] Arai [59] | Japón , Arai | 1976 | 200 | 130-110 | Fundición, señal analógica / mixta , CIS, NVM, RDL de Cu grueso | ||
Nuvoton [60] | Fab2 | Taiwán | 150 | 350–1000 nm | 45.000 [60] | Lógica genérica, señal mixta (modo mixto), alto voltaje , voltaje ultra alto , administración de energía , ROM de máscara (celda plana), lógica integrada , memoria no volátil, IGBT , MOSFET , biochip , TVS, sensor | ||
Nuvoton | Corporación de tecnología de Nuvoton | Taiwán , No. 4, Creación Rd. III, Parque Científico de Hsinchu | ||||||
Microchip (anteriormente California Micro Devices) (anteriormente GTE ) | Fabuloso 2 | EE.UU , AZ, Tempe | 130, 150, 200 | 5000–350 | ||||
Microchip (anteriormente Fujitsu ) | Fabuloso 4 | EE.UU , O, Gresham | 2004 | 200 | 500-130 | |||
Microchip (anteriormente Atmel ) | Fabuloso 5 | EE.UU , Colorado, Colorado Springs | 150 | 1000-250 | ||||
Rohm [61] (antes Renesas ) | Fábrica de Shiga | Japón | 200 | 150 | IGBT, MOSFET, MEMS | |||
Rohm (Lapis Semiconductor) (anteriormente Oki Semiconductor) ( Industria eléctrica de Oki ) [61] [62] | Miyasaki | Japón | 150 | MEMS | ||||
Rohm (Lapis Semiconductor) [61] | Edificio No.1 | Japón | 1961 [63] | Transistores | ||||
Rohm (Lapis Semiconductor) [61] | Edificio No.2 | Japón | 1962 [63] | Transistores | ||||
Rohm (Lapis Semiconductor) [61] | Edificio No.3 | Japón | 1962 [63] | Transistores | ||||
Rohm (Lapis Semiconductor) [61] | Edificio No.4 | Japón | 1969 [63] | Transistores | ||||
Rohm (Lapis Semiconductor) [61] | Planta de Chichibu | Japón | 1975 [63] | DRACMA | ||||
Rohm (Lapis Semiconductor) [61] | Laboratorio VLSI No. 1 | Japón | 1977 [63] | VLSI | ||||
Rohm (Lapis Semiconductor) [61] | Laboratorio VLSI No. 2 | Japón | 1983 [63] | |||||
Rohm (Lapis Semiconductor) [61] | Laboratorio VLSI No. 3 | Japón | 1983 [63] | DRACMA | ||||
Rohm (Lapis Semiconductor) [61] | Planta de Oregon | EE.UU , O | 1990 [63] | |||||
Rohm (Lapis Semiconductor) [61] | Tailandia | 1992 [63] | ||||||
Rohm (Lapis Semiconductor) [61] | Laboratorio ULSI No. 1 | Japón | 1992 [63] | 500 | DRACMA | |||
Rohm ( Kionix ) [64] | Ithaca | EE.UU , Nueva York, Ithaca | 150 | MEMS | ||||
Rohm ( Kionix ) [64] (anteriormente Renesas Kyoto ) | Kioto | Japón , Kioto | 200 | MEMS | ||||
Industria eléctrica de Oki [65] | Japón , Tokio, Minato-ku | 1961 | 100, 150, 130, 76 | 7.200 | Bipolar, ROM de máscara | |||
Industria eléctrica de Oki [65] | Miyazaki Oki Electric Co | 1981 | 100, 150, 130, 76 | 3000 | 7.200 | Bipolar, ROM de máscara, DRAM [63] | ||
Industria eléctrica de Oki [65] | Instalación de Miyagi | 1988 [63] | 100, 150, 130, 76 | 7.200 | Bipolar, ROM de máscara | |||
Industria eléctrica de Oki [65] | Instalación de Hachioji | 100, 150, 130, 76 | 7.200 | Bipolar, ROM de máscara | ||||
Industria eléctrica de Oki [66] | 150 | 180-150 | SoC , LSI, lógica, memoria | |||||
Fuji eléctrico [67] | Omachi | Japón , Prefectura de Nagano | ||||||
Fuji eléctrico [68] | Iyama | Japón , Prefectura de Nagano | ||||||
Fuji eléctrico [69] | Hokuriku | Japón , Prefectura de Toyama | ||||||
Fuji eléctrico [70] | Matsumoto | Japón , Prefectura de Nagano | ||||||
Fujitsu | Kawasaki | Japón , Kawasaki | 1966 [71] | |||||
Fujitsu [72] [73] | Fab B1 (en Mie) [74] | Japón, 1500 Tadocho Mizono, Kuwana, Mie [75] | 2005 | 300 | 65 , 90 | 15.000 | Fundición, circuitos integrados de energía ultrabaja , memoria integrada , circuitos integrados de RF | |
Fujitsu [72] [73] | Fab B2 (en Mie) [74] | Japón, 1500 Tadocho Mizono, Kuwana, Mie [75] | 1 (total) [76] | 2007, julio | 300 | 65 , 90 | 25.000 | Fundición, circuitos integrados de energía ultrabaja, memoria integrada, circuitos integrados de RF [77] |
Fujitsu [72] [73] | Japón, 1500 Tadocho Mizono, Kuwana, Mie [75] | 2015 | 300 | 40 [78] | 5,000 | Fundición | ||
Fujitsu | Planta de Kumagaya [74] | Japón , Saitama, 1224 Oaza-Nakanara, Kumagaya-shi, 360-0801 | 1974 | |||||
Fujitsu [79] | Planta Suzaka | Japón , Nagano, 460 Oaza-Koyama, Suzaka-shi, 382-8501 | ||||||
Fujitsu | Planta de Iwate [80] [4] | Japón , Iwate, 4-2 Nishinemoriyama, Kanegasaki-cho, Isawa-gun, 029-4593 | ||||||
Denso (anteriormente Fujitsu ) [81] | Denso Iwate [82] [83] [84] | Japón , Prefectura de Iwate, Kanegasaki-cho | 0,088 | En construcción, 2019, mayo (previsto) | Obleas y sensores semiconductores (desde junio de 2017) | |||
Canon Inc. | Oita [85] | Japón | ||||||
Canon Inc. | Kanagawa [86] | Japón | ||||||
Canon Inc. | Ayase [85] | Japón | ||||||
Sharp Corporation | Fukuyama [87] | Japón | ||||||
Semiconductor de Japón [88] | Iwate | Japón | ||||||
Japón Semiconductor [88] | Oita | Japón | ||||||
Kioxia | Operaciones de Yokkaichi [89] [90] | Japón , Yokkaichi | 1992 | 173,334 [91] [92] [93] [94] | Memoria flash | |||
Kioxia / SanDisk | Fab 5 Phase 1 (en las operaciones de Yokkaichi) | Japón, 800 Yamanoisshikicho, Yokkaichi, Mie [95] | 2011 | Destello | ||||
Kioxia / SanDisk | Fab 5 Phase 2 [95] (en las operaciones de Yokkaichi) | Japón , Mie | 2011 | 300 | 15 [96] | Destello | ||
Kioxia [97] | Fab 3 (en las operaciones de Yokkaichi) | Japón , Yokkaichi | Memoria NAND | |||||
Kioxia [98] | Fab 4 (en las operaciones de Yokkaichi) | Japón , Yokkaichi | 2007 | Memoria NAND | ||||
Kioxia [99] | Kaga Toshiba | Japón , Ishikawa | Dispositivos semiconductores de potencia | |||||
Kioxia [100] | Operaciones de Oita | Japón , Kyushu | ||||||
Kioxia [101] [102] | Fab 6 (fase 1) (en las operaciones de Yokkaichi) [103] | Japón , Yokkaichi | 1.6, 1.7, 1.8 (estimaciones) (costos combinados de instalación de equipo en la Fase 1 y construcción de la Fase 2) [104] [90] | 2018 | BiCS FLASH ™ | |||
Kioxia [101] [102] | Fab 6 (fase 2) (en las operaciones de Yokkaichi) | Japón , Yokkaichi | 1.6, 1.7, 1.8 (estimaciones) (costos combinados de instalación de equipo en la Fase 1 y construcción de la Fase 2) [104] [90] | Planificado | BiCS FLASH ™ | |||
Kioxia [101] [102] | Japón , Yokkaichi | 4.6 [105] [106] | Planificado | BiCS FLASH ™ | ||||
Kioxia [101] | Fab 2 (en las operaciones de Yokkaichi) | Japón , Yokkaichi | 1995 | NAND 3D | ||||
Kioxia [107] [108] | New Fab 2 (en las operaciones de Yokkaichi) | Japón , Yokkaichi | 2016, 15 de julio | NAND 3D | ||||
Kioxia [109] [110] [111] [112] | Japón , Prefectura de Iwate | Bajo construcción | NAND 3D | |||||
Western Digital [113] [114] | ||||||||
Hitachi [115] | Fábrica de Rinkai | Japón , 5-2-2, Omikacho, Hitachi-shi, Ibaraki, 319-1221 | Fundición MEMS | |||||
Hitachi [115] | Fábrica de Haramachi | Japón , 20 Aza Oohara, Shimo-Ota, Haramachi-ku, Minamisouma-shi, Fukushima, 975-0041 | Semiconductores de potencia | |||||
Hitachi [115] | Fábrica de Yamanashi | Japón , 545, Itchohata, Chuo-shi, Yamanashi, 409-3813 | Semiconductores de potencia | |||||
ABB [116] | Lenzburg | Suiza , Lenzburg | 0,140 | 2010 (segunda fase) | 130, 150 | 18,750 (225,000 por año) | Semiconductores de alta potencia, diodos, IGBT, BiMOS | |
ABB [116] | República Checa | |||||||
Mitsubishi Electric [117] | Power Device Works, sitio de Kunamoto | Japón | Semiconductores de potencia | |||||
Mitsubishi Electric [117] | Power Device Works, sitio de Fukuoka | Japón , Prefectura de Kunamoto, ciudad de Fukuoka [118] | Semiconductores y sensores de potencia [118] | |||||
Mitsubishi Electric [119] | Planta de fabricación de dispositivos ópticos de alta frecuencia | Japón , Prefectura de Hyogo [119] | Dispositivos semiconductores de alta frecuencia (GaAsFET, GaN , MMIC ) [119] | |||||
Semiconductor Powerchip | Memory Foundry, Fab P1 [120] [121] | Taiwán , Hsinchu | 2.24 [1] | 2002 [1] | 300 | 90 , 70 , 22 [122] | 80.000 | Fundición, IC de memoria, IC de unidad LCD , chips de memoria integrados, sensores de imagen CMOS e IC de administración de energía |
Semiconductor Powerchip | Fab P2 [121] | Taiwán , Hsinchu, Parque Científico de Hsinchu | 1,86 [1] | 2005 [1] | 300 | 90 , 70 , 22 [122] | 80.000 | Fundición, IC de memoria, IC de unidad LCD, chips de memoria integrados, sensores de imagen CMOS e IC de administración de energía |
Semiconductor Powerchip | Fab P3 [121] | Taiwán , Hsinchu, Parque Científico de Hsinchu | 300 | 90 , 70 , 22 [122] | 20.000 | Fundición, IC de memoria, IC de unidad LCD, chips de memoria integrados, sensores de imagen CMOS e IC de administración de energía | ||
Renesas [123] | Fábrica de Naka | 751, Horiguchi, Hitachinaka-shi, Ibaraki, 312-8504, Japón | 2009 | 300 | 28 [124] | |||
Renesas (antes Trecenti) | Japón [125] [126] | 300 | 180, 90, 65 | Fundición | ||||
Renesas [123] | Fábrica de Takasaki | 111, Nishiyokotemachi, Takasaki-shi, Gunma, 370-0021, Japón | ||||||
Renesas [123] | Fábrica de Shiga | 2-9-1, Seiran, Otsu-shi, Shiga, 520-8555, Japón | ||||||
Renesas [123] | Fábrica de Yamaguchi | 20192-3, Higashimagura Jinga, Ube-shi, Yamaguchi, 757-0298, Japón | ||||||
Renesas [123] | Fábrica de Kawashiri | 1-1-1, Yahata, Minami-ku, Kumamoto-shi, Kumamoto, 861-4195, Japón | ||||||
Renesas [123] | Fábrica de Saijo | 8-6, Hiuchi, Saijo-shi, Ehime, 793-8501, Japón | ||||||
Renesas [123] | Sitio de Musashi | 5-20-1, Josuihon-cho, Kodaira-shi, Tokio, 187-8588, Japón | ||||||
Renesas (antes NEC Electronics) (antes NEC ) | Roseville [127] [128] | EE.UU , CA, Roseville | 1.2 [129] | 2002, abril | 200 | RAM, SoC , chips multimedia | ||
Renesas - Intersil [123] | 1 Murphy Ranch Rd | EE.UU , CA, Milpitas | ||||||
Tecnología de dispositivo integrada | EE.UU , Oregón, Hillsboro | 1997 | 200 | 140-100 [130] | ||||
NEC [65] | 100, 130, 150 | SRAM , DRAM | ||||||
NEC [131] | Japón | DRACMA | ||||||
Semiconductores TSI [132] (anteriormente Renesas ) | Roseville fabulosa, M-Line, TD-Line, K-Line [133] [1] | EE.UU , CA, Roseville | 1992, 1985 [1] | 200 | ||||
TDK - Micronas | FREIBURG [134] [135] | Alemania , Friburgo, 19 D-79108, Hans-Bunte-Strasse | ||||||
TDK (antes Renesas ) | Tsuruoka Higashi [136] [137] | 125 [138] | ||||||
TDK | Japón , Saku [139] | |||||||
TDK - Tronics | EE.UU , TX, Addison [140] | |||||||
Silanna (anteriormente Sapphicon Semiconductor) | Australia , Sydney Olympic Park [1] | 0,030 | 1965 , 1989 [1] | 150 | ||||
Silanna (antes Sapphicon Semiconductor) (antes Peregrine Semiconductor ) (antes Integrated Device Technology ) | Australia , Sydney [141] | 150 | 500, 250 | RF CMOS , SOS , fundición | ||||
Fabricación de Murata [142] | Nagano [138] | Japón | 0,100 | Filtros SAW [138] | ||||
Fabricación de Murata [142] | Otsuki [138] | Japón | ||||||
Fabricación de Murata [142] | Kanazawa | Japón | 0,111 | Filtros SAW [138] | ||||
Murata Manufacturing (anteriormente Fujifilm ) [143] [144] | Sendai | Japón , Prefectura de Miyagi | 0,092 [138] | MEMS [145] | ||||
Fabricación de Murata [143] | Yamanashi | Japón , Prefectura de Yamanashi | ||||||
Fabricación de Murata [146] | Yasu | Japón , Yasu, Prefectura de Shiga | ||||||
Mitsumi Electric [147] | Obras de semiconductores n. ° 3 | Japón , Base de operaciones de Atsugi | 2000 | |||||
Mitsumi Electric [147] | Japón , Base de operaciones de Atsugi | 1979 | ||||||
Sony [148] | Centro de tecnología de Kagoshima | Japón , Kagoshima | 1973 | CCD bipolar, MOS, MMIC , SXRD | ||||
Sony [148] | Centro de tecnología de Oita | Japón , Oita | 2016 | Sensor de imagen CMOS | ||||
Sony [148] | Centro de tecnología de Nagasaki | Japón , Nagasaki | 1987 | MOS LSI, sensores de imagen CMOS, SXRD | ||||
Sony [148] | Centro de tecnología de Kumamoto | Japón , Kumamoto | 2001 | Sensores de acoplamiento CCD, H-LCD, SXRD | ||||
Sony [148] | Centro de tecnología Shiroishi Zao | Japón , Shiroishi | 1969 | Láseres semiconductores | ||||
Sony | Sony Shiroishi Semiconductor Inc. | Japón , Miyagi | Láseres semiconductores [149] | |||||
Sony (antes Renesas) (antes NEC Electronics) (antes NEC) [148] [150] [151] | Centro de tecnología de Yamagata | Japón , Yamagata | 2014 | Sensor de imagen CMOS, eDRAM (anteriormente) | ||||
MagnaChip | F-5 [152] | 2005 | 200 | 130 | ||||
SK Hynix [153] | porcelana , Chongqing | |||||||
SK Hynix [153] | porcelana , Chongqing | |||||||
SK Hynix [154] [155] | Corea del Sur , Cheongju, Chungcheongbuk-do | En construcción [156] | Flash NAND | |||||
SK Hynix [155] | Corea del Sur , Cheongju | Bajo construcción | Flash NAND | |||||
SK Hynix | M8 | Corea del Sur , Cheongju | 200 | Fundición | ||||
SK Hynix | M10 | Corea del Sur , Icheon | 300 | DRACMA | ||||
SK Hynix | M11 | Corea del Sur , Cheongju | 300 | Flash NAND | ||||
SK Hynix | M12 | Corea del Sur , Cheongju | 300 | Flash NAND | ||||
SK Hynix | HC1 | porcelana , Wuxi | 300 | 100.000 [7] | DRACMA | |||
SK Hynix | HC2 | porcelana , Wuxi | 300 | 70.000 [7] | DRACMA | |||
SK Hynix | M14 | Corea del Sur , Icheon | 300 | DRAM, flash NAND | ||||
SK Hynix [155] | M16 | Corea del Sur , Incheon | 3,13 (13,4 total previsto) | 2021 (planificado) | 300 | 10 (EUV) | 15.000-20.000 (inicial) | DRACMA |
LG Innotek [157] | Paju | Corea del Sur , 570, Hyuam-ro, Munsan-eup, Paju-si, Gyeonggi-do, 10842 | LED Epi-oblea, Chip, Paquete | |||||
Diodes Incorporated [158] (anteriormente Zetex Semiconductors ) | OFAB | Reino Unido , Oldham | 150 | |||||
Diodos incorporados (anteriormente BCD Semi ) [159] | porcelana | 150 | 4000–1000 | |||||
Diodes Incorporated (anteriormente Texas Instruments ) | GFAB | Reino Unido , Escocia, Greenock | 150/200 | 40.000 | ||||
Optoelectrónica Lite-On [160] | porcelana , Tianjin | |||||||
Optoelectrónica Lite-On [160] | Tailandia , Bangkok | |||||||
Optoelectrónica Lite-On [160] | porcelana , Jiangsu | |||||||
Semiconductor Lite-On [161] | Planta de Keelung | Taiwán , Keelung | 1990 | 100 | Tiristor , discreto | |||
Semiconductor Lite-On [161] | Planta Hsinchu | Taiwán , Hsinchu | 2005 | BCD bipolar, CMOS | ||||
Semiconductor Lite-On [161] | Lite-On Semi (Wuxi) | porcelana , Jiangsu | 2004 | 100 | Discreto | |||
Semiconductor Lite-On [161] | Planta Wuxi WMEC | porcelana , Jiangsu | 2005 | Circuitos integrados ópticos, discretos de potencia | ||||
Semiconductor Lite-On [161] | Planta de Shanghai (SSEC) | porcelana , Shanghái | 1993 | 76 | Fab, Asamblea | |||
Trumpf [162] (anteriormente Philips Photonics) | Alemania , Ulm | VCSEL | ||||||
Philips [163] | Países Bajos , Eindhoven | 200,150 | 30.000 | I + D, MEMS | ||||
Nexperia (anteriormente NXP Semiconductors ) (anteriormente Philips ) | Sitio de Hamburgo [164] | Alemania , Hamburgo | 1953 | 200 | 35.000 | Dispositivos discretos bipolares y de pequeña señal | ||
Nexperia (antes NXP Semiconductors ) (antes Philips ) (antes Mullard ) | Manchester [164] | Reino Unido , Bramhall Moor Lane, Pepper Rd, Hazel Grove, Stockport SK7 5BJ | 1987? | 150, 200 | 24 000 | FET de GaN , MOSFET de TrenchMOS | ||
Semiconductores NXP (anteriormente Philips ) | ICN8 | Países Bajos , Nijmegen | 200 | 40.000+ [165] | SiGe | |||
Semiconductores NXP | Japón [sesenta y cinco] | Bipolar, Mos, Analógico, Digital, Transistores, Diodos | ||||||
Semiconductores NXP - SSMC | SSMC | Singapur | 1.7 [1] | 2001 [1] | 200 | 120 | 53.000 | SiGe |
Semiconductores NXP - Jilin Semiconductor | porcelana , Jilin | 130 | ||||||
NXP Semiconductors (anteriormente Freescale Semiconductor ) (anteriormente Motorola ) | Oak Hill Fab [166] | EE.UU , Texas, Austin | .8 [167] | 1991 | 200 | 250 | ||
NXP Semiconductors (anteriormente Freescale Semiconductor ) (anteriormente Motorola ) | Chandler Fab [168] | EE.UU , AZ, Chandler [169] | 1,1 [170] +0,1 ( GaN ) | 1993 | 150 ( GaN ), 200 | 180 | PHEMT de GaN sobre SiC | |
NXP Semiconductors (anteriormente Freescale Semiconductor ) (anteriormente Motorola ) | ATMC [171] | EE.UU , Texas, Austin | 1995 | 200 | 90 | |||
NXP Semiconductors (anteriormente Freescale Semiconductor ) (anteriormente Motorola ) | MOTOFAB1 [172] | México , Guadalajara | 2002 | |||||
AWSC | Taiwán , Tainan [1] | 1999 [1] | 150 | 12 000 | Fundición, GaAs HBT, D pHEMT, IPD, ED pHEMT, ED BiHEMT, InGaP | |||
Skyworks Solutions [173] (anteriormente Conexant ) (anteriormente Rockwell ) | EE.UU , CA | 100, 150 | Semiconductores compuestos (GaAs, AlGaAs , InGaP ) | |||||
Skyworks Solutions [173] (anteriormente Alpha Industries) | EE.UU , MA, Woburn | 100, 150 | RF / componentes celulares (SiGe, GaAs) | |||||
Soluciones Skyworks [173] | Japón , Osaka | Filtros SAW, TC-SAW | ||||||
Soluciones Skyworks [173] | Japón , Kadoma | Filtros SAW, TC-SAW | ||||||
Soluciones Skyworks [173] | Singapur , Bedok South Road | Filtros SAW, TC-SAW | ||||||
Gana Semiconductor | Fabuloso A [174] | Taiwán , Ciudad de Taoyuan | 150 [175] | 2000–10 | Fundición, GaAs | |||
Gana Semiconductor | Fab B [174] | Taiwán , Ciudad de Taoyuan | 150 [175] | 2000–10 | Fundición, GaAs , GaN | |||
Gana Semiconductor | Fab C | Taiwán , Taoyuan [1] | 0,050, 0,178 | 2000, 2009 [1] | 150 | Fundición, GaAs | ||
ON Semiconductor (anteriormente Motorola ) | ISMF | Malasia , Seremban | 150 | 350 | 80.000 | Discreto | ||
ON Semiconductor (anteriormente LSI ) | Gresham [176] | EE.UU , O, Gresham | 200 | 110 | ||||
ON Semiconductor (anteriormente TESLA ) | Roznov | República Checa , Roznov | 150 | 5000 | ||||
ON Semiconductor (anteriormente AMI Semiconductor ) | Pocatello [177] | EE.UU , ID, Pocatello | 200 | 350 | ||||
ON Semiconductor (antes AMI Semiconductor ) (antes Alcatel Microelectronics) (antes Mietec) | Oudenaarde | Bélgica , Oudenaarde | 150 | 350 | 4000 | |||
ON Semiconductor (anteriormente Sanyo ) [178] [179] | Niigata | Japón , Niigata | 130, 150 | 350 | ||||
ON Semiconductor (anteriormente Fairchild Semiconductor ) (anteriormente National Semiconductor ) (anteriormente Fairchild Semiconductor ) | EE.UU , PA, cima de la montaña | 1960/1997 | 200 | 350 | ||||
ON Semiconductor (anteriormente Fairchild Semiconductor ) (anteriormente National Semiconductor ) (anteriormente Fairchild Semiconductor ) | EE.UU , YO, South Portland | 1960/1997 | 200 | 350 | ||||
ON Semiconductor (anteriormente Fujitsu ) [180] [181] | Planta Aizu Wakamatsu [182] | Japón , Fukushima, 3 Kogyo Danchi, Monden-machi, Aizuwakamatsu-shi, 965-8502 | 1970 [71] | 150, 200 [183] [184] [185] [186] | Memoria, lógica | |||
ams [187] | FAB B | Austria , Unterpremstaetten | 200 | 350 | ||||
Osram (Opto Semiconductores Osram) | Malasia , Kulim, Parque de alta tecnología de Kulim | 0,350, 1,18 [188] | 2017, 2020 (segunda fase, prevista) [189] [190] | 150 | LED | |||
Osram (Opto Semiconductores Osram) | Malasia , Penang [191] [192] | 2009 | 100 | LED | ||||
Osram (Opto Semiconductores Osram) | Alemania , Ratisbona [193] | 2003, 2005 (segunda fase) [194] | LED | |||||
Winbond | Fundición de productos de memoria [195] | Taiwán , Taichung | 300 | 46 | ||||
Winbond | Sitio CTSP [196] [197] | Taiwán , No. 8, Keya 1st Rd., Daya Dist., Central Taiwan Science Park, Taichung City 42881 | 300 | |||||
Winbond [198] | Planificado | 300 | ||||||
Vanguard International Semiconductor | Fabuloso 1 | Taiwán , Hsinchu | 0,997 [1] | 1994 [1] | 200 | 55.000 | Fundición | |
Vanguard International Semiconductor (anteriormente Winbond ) | Fab 2 (anteriormente Fab 4 & 5) [199] | Taiwán , Hsinchu | 0,965 [1] | 1998 [1] | 200 | 55.000 | Fundición | |
Vanguard International Semiconductor Corporation (antes GlobalFoundries ) (antes Chartered ) | Fantástico 3E [200] | Singapur | 1.3 [1] | 200 | 180 | 34 000 | Fundición | |
TSMC | Fantástico 2 [201] | Taiwán , Hsinchu | 0,735 [1] | 1990 [1] | 150 | 88.000 [202] [1] | Fundición | |
TSMC | Fabuloso 3 | Taiwán , Hsinchu | 2 [1] | 1995 [1] | 200 | 100.000 [1] | Fundición | |
TSMC | Fabuloso 5 | Taiwán , Hsinchu | 1.4 [1] | 1997 [1] | 200 | 48.000 [1] | Fundición | |
TSMC | Fabuloso 6 | Taiwán , Tainan | 2.1 [1] | 2000, enero; 2001 [125] | 200, 300 | 180–? | 99.000 [1] | Fundición |
TSMC (antes TASMC) (antes Acer Semiconductor Manufacturing Inc. ) (antes Texas Instruments ) [203] [204] [205] | Fantástico 7 [206] | Taiwán | 200 | 350, 250, 220, 180 | 33.000 | Fundición (actual) DRAM (antes), Logic (antes) | ||
TSMC (anteriormente WSMC) | Fabuloso 8 | Taiwán , Hsinchu | 1.6 [1] | 1998 [1] | 200 | 250, 180 | 85.000 [1] | Fundición |
TSMC (anteriormente WSMC) [126] | 2000 | 200 | 250, 150 | 30.000 | Fundición | |||
TSMC | Fabuloso 10 | porcelana , Shanghái | 1.3 [1] | 2004 [1] | 200 | 74.000 | Fundición | |
TSMC WaferTech | Fabuloso 11 | EE.UU , WA, Camas | 1.2 | 1998 | 200 | 350, 250, 180, 160 | 33.000 | Fundición |
TSMC | Fabuloso 12 | Taiwán , Hsinchu | 5,2, 21,6 (total, todas las fases combinadas) [1] | 2001 [1] | 300 | 150- 28 | 77,500-123,800 (todas las fases combinadas) [1] | Fundición |
TSMC | Fabuloso 12A | Taiwán , Hsinchu | 300 | 25.000 | Fundición | |||
TSMC | Fabuloso 12B | Taiwán , Hsinchu | 300 | 25.000 | Fundición | |||
TSMC | Fabuloso 12 (P4) | Taiwán , Hsinchu | 6 [1] | 2009 [1] | 300 | 20 | 40.000 [1] | Fundición |
TSMC | Fabuloso 12 (P5) | Taiwán , Hsinchu | 3.6 [1] | 2011 [1] | 300 | 20 | 6.800 [1] | Fundición |
TSMC | Fabuloso 12 (P6) | Taiwán , Hsinchu | 4.2 [1] | 2013 [1] | 300 | dieciséis | 25.000 | Fundición |
TSMC | Fabuloso 12 (P7) | Taiwán , Hsinchu | (futuro) | 300 | dieciséis | Fundición | ||
TSMC | Fab 12 (P8) [1] | Taiwán , Chunan [1] | 5.1 [1] | 2017 [1] | 450 [1] | Fundición | ||
TSMC | Fabuloso 14 | Taiwán , Tainan | 5.1 [1] | 2002, [125] 2004 [1] | 300 | 20 | 82,500 [1] | Fundición |
TSMC | Fabuloso 14 (B) | Taiwán , Tainan | 300 | dieciséis | 50.000+ [207] | Fundición | ||
TSMC | Fab 14 (P3) [1] | Taiwán , Tainan | 3.1 [1] | 2008 [1] | 300 | dieciséis | 55.000 [1] | Fundición |
TSMC | Fab 14 (P4) [1] | Taiwán , Tainan | 3.750 [1] | 2011 [1] | 300 | dieciséis | 45.500 [1] | Fundición |
TSMC | Fab 14 (P5) [1] | Taiwán , Tainan | 3.650 [1] | 2013 [1] | 300 | dieciséis | Fundición | |
TSMC | Fab 14 (P7) [1] | Taiwán , Tainan | 4.850 [1] | 2015 [1] | 300 | dieciséis | Fundición | |
TSMC | Fab 14 (P6) [1] | Taiwán , Tainan | 4.2 [1] | 2014 [1] | 300 | dieciséis | Fundición | |
TSMC | Fab 15 [208] | Taiwán , Taichung | 9.3 | 2011 | 300 | 20 | Más de 100.000 (estimación de 166.000) [209] [207] [210] | Fundición |
TSMC | Fabuloso 15 (B) | Taiwán , Taichung | 300 | Fundición | ||||
TSMC | Fab 15 (P1) [1] | Taiwán , Taichung | 3.125 [1] | 2011 | 300 | 4.000 [1] | Fundición | |
TSMC | Fab 15 (P2) [1] | Taiwán , Taichung | 3.150 [1] | 2012 [1] | 300 | Fundición | ||
TSMC | Fab 15 (P3) [1] | Taiwán , Taichung | 3.750 [1] | 2013 [1] | 300 | Fundición | ||
TSMC | Fab 15 (P4) [1] | Taiwán , Taichung | 3.800 [1] | 2014 [1] | 300 | Fundición | ||
TSMC | Fab 15 (P5) [1] | Taiwán , Taichung | 9.020 [1] | 2016 [1] | 300 | 35.000 | Fundición | |
TSMC | Fabuloso 18 | Taiwán , Parque Científico del Sur de Taiwán [211] [212] | 17.08 | 2020 (planificado), en construcción | 300 | 5 [213] | 120.000 | Fundición |
TSMC [7] | NJ Fab 16 | porcelana , Nanjing | 2018 | 300 | 20.000 | Fundición | ||
TSMC [7] [214] [215] | Taiwán , Parque Científico de Tainan [216] | 20 (esperado) [217] | Futuro | 3 [218] [219] | Fundición | |||
TSMC | 20 [220] | 2022 (planificado) [221] | 3 | Fundición | ||||
TSMC | EE.UU , AZ, Phoenix | 15 [222] | 2024 (previsto) [222] | 5 | 20.000 | Fundición | ||
Epistar | F1 fabuloso [223] | Taiwán , Parque Científico de Longtan | LED | |||||
Epistar | Fabuloso A1 [223] | Taiwán , Parque Científico de Hsinchu | LED | |||||
Epistar | Fab N2 [223] | Taiwán , Parque Científico de Hsinchu | LED | |||||
Epistar | Fab N8 [223] | Taiwán , Parque Científico de Hsinchu | LED | |||||
Epistar | Fab N1 [223] | Taiwán , Parque Científico de Hsinchu | LED | |||||
Epistar | Fab N3 [223] | Taiwán , Parque Científico de Hsinchu | LED | |||||
Epistar | Fab N6 [223] | Taiwán , Parque Científico de Chunan | LED | |||||
Epistar | Fab N9 [223] | Taiwán , Parque Científico de Chunan | LED | |||||
Epistar | Fab H1 [223] | Taiwán , Parque Científico Central de Taiwán | LED | |||||
Epistar | Fab S1 [223] | Taiwán , Parque de las Ciencias de Tainan | LED | |||||
Epistar | Fab S3 [223] | Taiwán , Parque de las Ciencias de Tainan | LED | |||||
Epistar (anteriormente TSMC) [224] [225] [226] | Taiwán , Parque Científico Hsin-Chu | 0,080 | 2011, segundo semestre | LED | ||||
Lextar | T01 | Taiwán , Parque Científico de Hsinchu | LED | |||||
GCS | EE.UU , CA, Torrance [1] | 1999 [1] | 100 | 6.400 | Fundición, GaAs , InGaAs , InGaP , InP , HBT , PIC | |||
Bosch | Alemania , Reutlingen | 1995 [227] | 150 | ASIC , analógico, potencia, SiC | ||||
Bosch | Alemania , Dresde | 1.0 [228] | bajo construcción | 300 | sesenta y cinco | |||
Bosch | WaferFab | Alemania , Reutlingen | 0,708 [229] | 2010 [227] | 200 | 30.000 | ASIC, analógico, potencia, MEMS | |
STMicroelectronics | AMK8 (segundo, más nuevo fabuloso) | Singapur , Ang Mo Kio | 1995 | 200 | ||||
STMicroelectronics (anteriormente SGS Microelettronica) | AMJ9 (primer fabuloso) | Singapur , Ang Mo Kio | 1984 [230] | 150, 200 | 6 "14 kpc / día, 8" 1,4 kpc / día | Energía-MOS / IGBT / bipolar / CMOS | ||
STMicroelectronics | Crolles 1 / Crolles 200 | Francia , Crolles | 1993 | 200 | 25.000 | |||
STMicroelectronics | Crolles2 / Crolles 300 | Francia , Crolles | 2003 | 300 | 90 , 65 , 45 , 32 , 28 | 20.000 | FDSOI | |
STMicroelectronics | Excursiones | Francia , Tours | 200 | 500 | 8 ": 9kpzas / W; 12" 400–1000 / W | ASIC | ||
STMicroelectronics (anteriormente SGS-ATES) | R2 (actualizado en 2001 desde R1) | Italia , Agrate Brianza | 1963 | 200 | ||||
STMicroelectronics (anteriormente SGS-ATES) | AG8 / AGM | Italia , Agrate Brianza | 1963 | 200 | ||||
STMicroelectronics | Catania | Italia , Catania | 1997 | 150 ( GaN ), 200 | GaN | |||
STMicroelectronics | Rousset | Francia , Rousset | 2000 | 200 | ||||
X-Fab | Erfurt | Alemania , Erfurt | 1985 [1] | 200 [231] | 600-1000 [231] | 11200– [231] | Fundición | |
X-Fab (anteriormente ZMD ) | Dresde | Alemania , Dresde | 0.095 [1] | 1985 [1] | 200 [232] | 350–1000 [232] | 6000– [232] | Fundición, CMOS, GaN-on-Si |
X-Fab (anteriormente Itzehoe) | Itzehoe | Alemania , Itzehoe | 200 [233] | 13000– [233] | Fundición, MEMS | |||
X-Fab (anteriormente 1st Silicon) [234] [235] | Kuching | Malasia , Kuching | 1,89 [1] | 2000 [1] | 200 [236] | 130-350 [236] | 30.000– [236] | Fundición |
X-Fab (anteriormente Texas Instruments ) | Lubbock | EE.UU , TX, Lubbock | 0.197 [1] | 1977 [1] | 150, 200 [237] | 600–1000 [237] | 15000– [237] | Fundición, SiC |
X-Fab France SAS (anteriormente Altis Semiconductor ) (anteriormente IBM ) [238] | ACL-AMF | Francia , Corbeil-Essonnes | 1991, 1964 [1] | 200 | 130-350 | Fundición, CMOS, RF SOI | ||
CEITEC | Brasil , Puerto alegre | 2010 | 200 | 600–1000 | RFID | |||
IXYS | Alemania | IGBT [239] | ||||||
IXYS | Reino Unido [239] | |||||||
IXYS | EE.UU , MA [239] | |||||||
IXYS | EE.UU , CA [239] | |||||||
Samsung | V1-Line [240] | Corea del Sur , Hwaseong | 6 | 2020, 20 de febrero | 300 | 7 | Microprocesadores, Fundición | |
Samsung | Línea S3 [241] | Corea del Sur , Hwaseong | 10,2, 16,2 (previsto) [242] [243] | 300 | 10 | 200.000 | DRAM, VNAND, Fundición | |
Samsung | Línea S2 [244] | EE.UU , Texas, Austin | 16 [245] [246] | 2011 | 300 | 65 - 11 | 92.000 | Microprocesadores, FDSOI, fundición, NAND [247] |
Samsung | Línea S1 [248] | Corea del Sur , Giheung | 33 (total) | 2005 (segunda fase), 1983 (primera fase) [249] [250] | 300 | 65 - 7 | 62.000 | Microprocesadores, S.LSI, LED, FDSOI, Fundición [251] |
Samsung | Pyeongtaek [252] [253] [242] | Corea del Sur , Pyeongtaek | 14,7, 27 (total) [254] [246] [255] [256] [257] [258] [259] [156] | 2017, 6 de julio | 300 | 14 | 450.000 [260] | V-NAND, DRAM, Fundición |
Samsung | 6 línea [261] | Corea del Sur , Giheung | 200 | 180 - 65 | Fundición | |||
Samsung | Semiconductor de Samsung China [262] | porcelana , Provincia de Shaanxi | Memoria DDR | |||||
Samsung | Centro de investigación de Samsung Suzhou (SSCR) [248] | porcelana , Suzhou, parque industrial de Suzhou | Memoria DDR | |||||
Samsung | Complejo de Onyang [262] | Corea del Sur , Chungcheongnam-do | display.backend process.test | |||||
Samsung | F1x1 [263] [242] | porcelana , Xian | 2,3 [264] | 2014 (se está revisando la primera fase, la segunda fase) [242] | 300 | 20 | 100.000 | VNAND |
Samsung | Campus de Giheung [265] | Corea del Sur , Gyeonggi-do, Yongin | LED | |||||
Samsung | Campus de Hwasung [265] | Corea del Sur , Gyeonggi-do, Hwaseong | LED | |||||
Samsung | Tianjin Samsung LED Co., Ltd. [265] | porcelana , Tianjin, Xiqing, Parque Industrial Microelectrónico, Weisi Road | LED | |||||
Seagate | EE.UU , MN [266] | |||||||
Seagate | Reino Unido , Irlanda del Norte [267] [268] [269] [270] | |||||||
Broadcom Limited | EE.UU , Colorado, Fort Collins [271] | |||||||
Cree Inc. [272] | Durham | EE.UU , Carolina del Norte, Durham | Semiconductores compuestos, LED | |||||
Cree Inc. [273] | Research Triangle Park | EE.UU , NC | Circuitos integrados de RF GaN HEMT | |||||
Tecnologías modulares SMART | Brasil , Atibaia | 2006 | embalaje | |||||
NEWPORT WAFER FAB [274] (anteriormente Infineon Technologies ) | FAB11 | Reino Unido , Gales, Newport | 200 [275] | 180–700 [275] | 32 000 [275] | Fundición, Semiconductores compuestos, IC, MOSFET, IGBT [276] | ||
Tecnologías de memoria Changxin | porcelana | 7.2 | 2019 | 300 | 19, 17 | 125 000 | DRAM [277] | |
Infineon Technologies | Villach | Austria , Villach | 1970 [278] | 100/150/200/300 | MEMS, SiC, GaN | |||
Infineon Technologies | Dresde | Alemania , Dresde | 3 [279] | 1994/2011 [280] | 200/300 | 90 | ||
Infineon Technologies | Kulim [281] | Malasia , Kulim | 2006 [282] | 200/300 | 50.000 | |||
Infineon Technologies | Kulim 2 | Malasia , Kulim | 2015 | 200/300 | 50.000 | |||
Infineon Technologies | Ratisbona [283] | Alemania , Ratisbona | 1959 | |||||
Infineon Technologies | Cegled [284] | Hungría , Cegled | ||||||
Infineon Technologies | Cheonan | Corea del Sur , Cheonan-si | ||||||
Infineon Technologies | El Segundo | EE.UU , CA, El Segundo [285] | ||||||
Infineon Technologies | Batam | Indonesia , Batam | ||||||
Infineon Technologies | Leominster | EE.UU | ||||||
Infineon Technologies | Malaca | Malasia | ||||||
Infineon Technologies | Colina baja | EE.UU | ||||||
Infineon Technologies | Morgan Hill | EE.UU | ||||||
Infineon Technologies | Morrisville | EE.UU | ||||||
Infineon Technologies | Neubiberg | Alemania | ||||||
Infineon Technologies | San Jose | EE.UU | ||||||
Infineon Technologies | Singapur | |||||||
Infineon Technologies | Temecula | EE.UU | ||||||
Infineon Technologies | Tijuana | México | ||||||
Infineon Technologies | Warstein | Alemania | ||||||
Infineon Technologies | Wuxi | porcelana | ||||||
Infineon Technologies - Cypress Semiconductor | Fab25 | EE.UU , Texas, Austin | 1994 | 200 | Flash / Lógica | |||
Tecnología SkyWater (anteriormente Cypress Semiconductor ) (anteriormente Control Data ) (anteriormente VTC) | Minnesota fabuloso | EE.UU , MN, Bloomington | 1991 | 200 | 65 , 90 , 130 , 180 , 250 , 350 | Fundición, SOI, FDSOI, MEMS, SiPh , CNT , embalaje 3D, circuitos integrados superconductores | ||
Sistemas D-Wave [286] | Fundición superconductora [287] | Unidades de procesamiento cuántico (QPU) [287] | ||||||
GlobalFoundries (anteriormente AMD ) | Módulo 1 de Fab 1 [288] | Alemania , Dresde | 3.6 [1] | 2005 | 300 | 22 - 45 | 35.000 [1] | Fundición, SOI, FDSOI |
GlobalFoundries (anteriormente AMD ) | Fab 1 Módulo 2 | Alemania , Dresde | 4.9 [1] | 1999 | 300 | 22 - 45 | 25.000 [1] | Fundición, SOI |
GlobalFoundries | Fab 1 módulo 3 | Alemania , Dresde | 2.3 [1] | 2011 [1] | 300 | 22 - 45 | 6.000 [1] | Fundición, SOI |
GlobalFoundries (anteriormente Chartered ) | Fantástico 2 [200] | Singapur | 1.3 [1] | 1995 [1] | 200 | 350 –600 | 56.000 [1] | Fundición, SOI |
GlobalFoundries (anteriormente Chartered ) | Fabuloso 5/3 [200] | Singapur | 0,915, 1,2 [1] | 1997, 1995 [1] | 200 | 180 –350 | 54.000 | Fundición, SOI |
GlobalFoundries (anteriormente Chartered ) | Fab 6 [200] (fusionado en Fab 7) | Singapur | 1.4 [1] | 2000 [1] | 200, 300 (combinado) | 110 –180 | 45.000 | Fundición, SOI |
GlobalFoundries (anteriormente Chartered ) | Fantástico 7 [288] | Singapur | 4.6 [1] | 2005 [1] | 300 | 40 , 65 , 90 , 110 , 130 | 50.000 | Fundición, CMOS a granel , RF SOI |
GlobalFoundries | Fantástico 8 [288] | EE.UU , Nueva York, Malta | 4.6, 2.1, 13+ (total) [289] [290] | 2012, 2014 [1] | 300 | 12 / 14 / 22 / 28 | 60.000 | Fundición, Puerta de metal de alto K , [291] SOI FinFET |
GlobalFoundries | Centro de desarrollo tecnológico [1] | EE.UU , Nueva York, Malta | 1,5 [1] | 2014 [1] | ||||
GlobalFoundries (anteriormente IBM ) | Fabuloso 9 | EE.UU , VT, Essex Junction | 200 | 90-350 | 40.000 | Fundición, SiGe, RF SOI | ||
(futuro ON Semiconductor ) GlobalFoundries (anteriormente IBM ) [292] [293] [294] | Fabuloso 10 | EE.UU , Nueva York, East Fishkill | 2.5, +.29 (futuro) [289] | 2002 | 300 | 90 - 22 , 14 | 12.000-15.000 [289] | Fundición, RF SOI , SOI FinFET (ex) , SiGe, SiPh |
SUNY Poly CNSE | NanoFab 300 North [295] | EE.UU , Nueva York, Albany | .175, .050 | 2004, 2005 | 300 | 65 , 45 , 32 , 22 | ||
SUNY Poly CNSE | NanoFab 200 [296] | EE.UU , Nueva York, Albany | .016 | 1997 | 200 | |||
SUNY Poly CNSE | NanoFab Central [295] | EE.UU , Nueva York, Albany | .150 | 2009 | 300 | 22 | ||
Skorpios Technologies (antes Novati) (antes ATDF ) (antes SEMATECH ) | EE.UU , Texas, Austin [1] [297] | 0,065 | 1989 [1] | 200 | 10,000 | MEMS, fotónica, fundición | ||
Diodo óptico | EE.UU , CA, Camarillo [298] | |||||||
Tecnología Optek [65] | 1968 | 100, 150 | GaAs , LED | |||||
II-VI (antes Oclaro ) (antes Bookham ) (antes NORTHERN TELECOM SEMICONDUCTOR NORTHERN TELECOM EUROPE [65] ) (anteriormente JDS Uniphase ) (anteriormente Uniphase) | Láseres semiconductores, fotodiodos | |||||||
Infinera | EE.UU , CA [299] [300] | |||||||
Microdispositivos de Rogue Valley | EE.UU , Oregón, Medford | 2003 | 150 | Fundición de MEMS | ||||
IMT | Fabuloso 1 | EE.UU , CA, Goleta | 2000 | 150, 200 | 350 | 20.000 | Fundición: MEMS, Fotónica , Sensores, Biochips | |
Sensera | uDev-1 | EE.UU , MA, Woburn | 2014 | 150 | 700 | 1.000 | MEMS, montaje de microdispositivo | |
Computación Rigetti | Fab-1 [301] [302] [303] | EE.UU , CA, Fremont | 130 | Procesadores cuánticos | ||||
Semiconductores avanzados [304] | MNC | EE.UU , Carolina del Norte, Morrisville | 2001 | 100, 150, 200 | > = 500 | 1000 | MEMS, sensores de silicio, BEoL, 2.5 / 3D y empaquetado avanzado | |
Semiconductor polar [305] | FAB 1,2,3 | EE.UU , MN, Bloomington | 200 | BCD, HV, GMR | ||||
Tecnologías Noel [306] | 450–51 [307] [306] | 500–250 [308] | ||||||
Semiconductor de órbita [65] | 100 | CCD, CMOS | ||||||
Entrepix | EE.UU , Arizona, Tempe [1] | 2003 [1] | ||||||
Medtronic | EE.UU , Arizona, Tempe [1] | 1973 [1] | ||||||
Technologies and Devices International | EE.UU , Florida, Silver Springs [1] | 2002 [1] | ||||||
Soraa Inc | EE.UU , CA [309] [310] | |||||||
Diodo láser de Soraa [309] | ||||||||
Tecnologías Mirrorcle | EE.UU , CA [311] | |||||||
Teledyne DALSA | Semiconductor Teledyne DALSA | Canadá , Bromont, QC | 1980 | 150/200 | ASIC HV, CMOS HV, MEMS, CCD | |||
HT Micron | Brasil , São Leopoldo | 2014 | DRAM, eMCP, iMCP | |||||
Unitec do Brasil | Brasil , Ribeirão Neves | Planificado | ||||||
Azul Unitec [312] | Argentina , Chascomús | 0,3 (1,2 previsto) [313] | 2013 | RFID, SIM , EMV | ||||
Everlight | Planta Yuan-Li | Taiwán , Miao-Li | LED | |||||
Everlight | Planta Pan-Yu | porcelana | LED | |||||
Everlight | Planta Tu-Cheng | Taiwán , País de Taipei | LED | |||||
Optotech [314] | Taiwán , Hsinchu | LED | ||||||
Optoelectrónica Arima | Taiwán , Hsinchu [1] | 1999 [1] | ||||||
Semiconductor Episil | Taiwán , Hsinchu [1] | 1992, 1990, 1988 [1] | ||||||
Semiconductor Episil | Taiwán , Hsinchu [1] | 1992, 1990, 1988 [1] | ||||||
Creative Sensor Inc. [315] [316] | Sensor creativo NanChang | porcelana , Jiangxi | 2007 | Sensores de imagen | ||||
Creative Sensor Inc. [315] | Sensor creativo de Wuxi | porcelana , JiangSu | 2002 | |||||
Creative Sensor Inc. [315] | Sensor creativo de Wuxi | Taiwán , La ciudad de Taipei | 1998 | |||||
Tecnologías de Visera [317] | Sede Fase I | Taiwán , Parque industrial científico de Hsinchu | 2007, septiembre | Sensores de imagen CMOS | ||||
Panjit | Taiwán , Kaohsiung [1] | 0,1 | 2003 [1] | |||||
ProMOS | Fab 4 [318] [319] | Taiwán , Taichung | 1,6 | 300 | 70 | |||
Macronix [320] | Fabuloso 5 | 300 | 50.000 | |||||
Macronix [320] | Fabuloso 2 | 200 | 48.000 | |||||
Macronix [320] | Fabuloso 1 | 150 | 40.000 | |||||
Instalación de fabricación de nanosistemas | Hong Kong [321] | |||||||
ASMC [322] | FAB 1/2 | porcelana , Shanghái | 1992, 1997 [1] | 200 | 600 | 78.000 [1] | BCD, HV | |
ASMC [322] | FAB 3 | porcelana , Shanghái | 2004 [1] | 200 | 250 | 12.000 [1] | ||
Beilling [323] | porcelana , Shanghái | 150 | 1200 | BiCMOS , CMOS | ||||
SiSemi [324] | porcelana , Shenzhen, parque industrial de alta tecnología de Longgang [325] | 2004 | 130 | Semiconductores de potencia, controladores LED, transistores de potencia bipolares , MOSFET de potencia | ||||
SiSemi [325] | 1997 | 100 | Transistores | |||||
CRMicro (anteriormente CSMC) [326] | Fabuloso 1 | 1998 [1] | 150 [327] | 60.000 [1] | HV Analógico, MEMS, Energía, Analógico, Fundición | |||
CRMicro (anteriormente CSMC) | Fabuloso 2 | porcelana , Wuxi | 2008 [1] | 200 [327] | 180, 130 | 40.000 [1] | Alta tensión analógica, fundición | |
CRMicro (anteriormente CSMC) | Fabuloso 3 | 1995 [1] | 200 [327] | 130 | 20.000 [1] | |||
CRMicro (anteriormente CSMC) | Fabuloso 5 | 2005 [1] | 30.000 [1] | |||||
Huali (Shanghai Huali Microelectronics Corp, HLMC) [7] [328] | F1 | porcelana , Shanghái | 300 | 193, 55, 40, 28 [329] | 35.000 | Fundición | ||
Huali [7] | F2 | porcelana , Shanghái | Bajo construcción | 300 | 40.000 | |||
Nexchip [7] | N1 [330] | porcelana , Hefei | Cuarto trimestre de 2017 | 300 | 40.000 | Controladores de pantalla IC [331] | ||
Nexchip [7] | N2 [330] | porcelana , Hefei | Bajo construcción | 300 | 40.000 | |||
Nexchip [7] | N3 [330] | porcelana , Hefei | Bajo construcción | 300 | 40.000 | |||
Nexchip [7] | N4 [330] | porcelana , Hefei | Bajo construcción | 300 | 40.000 | |||
Wandai [7] | CQ | porcelana , Chongqing | Bajo construcción | 300 | 20.000 | |||
Optoelectrónica San'an | Tianjin San'an Optoelectronics Co., Ltd. | porcelana , Tianjin | LED | |||||
Optoelectrónica San'an | Tecnología Co., Ltd. de la optoelectrónica de Xiamen San'an | porcelana | LED | |||||
Optoelectrónica San'an | Circuito integrado Xiamen San'an | porcelana | CI | |||||
Optoelectrónica San'an | Xiamen San'an Optoelectronics Co., Ltd. | porcelana | LED | |||||
Optoelectrónica San'an | Fujian Jing'an Optoelectronics Co., Ltd. | porcelana | LED | |||||
Optoelectrónica San'an | Optoelectrónica Co., Ltd. de Wuhu Anrui | porcelana | LED | |||||
Optoelectrónica San'an | Anrui San'an Optoelectronics Co., Ltd. | porcelana | LED | |||||
Optoelectrónica San'an | Tecnología Co., Ltd. de Anrui San'an | porcelana | LED | |||||
Optoelectrónica San'an | Resumen de Luminus | EE.UU | LED | |||||
San'an [332] | porcelana , Xiamen | Fundición, GaN , Energía, RF | ||||||
HuahongGrace [333] | FAB | porcelana , Shanghái | 300 | 90 | Fundición | |||
HuahongGrace (HHGrace, Huahong Grace, Corporación de Fabricación de Semiconductores de Shanghai Huahong Grace) | porcelana , Zhangjiang | 200 | 1000–90 | 53.000 | Fundición, eNVM, RF, señal mixta, lógica, gestión de energía , potencia discreta | |||
HuahongGrace | porcelana , Jinqiao | 200 | 1000–90 | 53.000 | Fundición, eNVM, RF, señal mixta, lógica, gestión de energía , potencia discreta | |||
HuahongGrace | porcelana , Shanghái | 200 | 1000–90 | 53.000 | Fundición, eNVM, RF, señal mixta, lógica, gestión de energía , potencia discreta | |||
HuaLei optoelectrónico | porcelana | LED [334] | ||||||
Tecnología Sino King [6] | porcelana , Hefei | 2017 | DRACMA | |||||
Electrónica APT | porcelana , Guangzhou [1] | 2006 [1] | ||||||
Aqualite | porcelana , Guangzhou [1] | 2006 [1] | ||||||
Aqualite | porcelana , Wuhan [1] | 2008 [1] | ||||||
Fabricación de semiconductores en Xiamen Jaysun | Fabuloso 101 | porcelana , Xiamen [1] | 0,035 | 2011 [1] | ||||
Tecnología electrónica de Xiyue | Fabuloso 1 | porcelana , Xian [1] | 0,096 | 2007 [1] | ||||
Hanking Electronics | Fabuloso 1 | porcelana , Fushun | 2018 | 200 | 10,000 - 30,000 | Fundición MEMS , Diseño MEMS Sensores MEMS (inercial, presión, ultrasonido , piezoeléctrico , LiDar , bolómetro ) Sensores de movimiento de IoT | ||
CanSemi [335] | porcelana , Guangzhou | 4 | 300 | 180-130 | Fundición [336] | |||
SensFab | Singapur [1] | 1995 [1] | ||||||
Semiconductor MIMOS | Malasia , Kuala Lumpur [1] | 0,006, 0,135 | 1997, 2002 [1] | |||||
Silterra Malasia | Fab1 | Malasia , Kedah, Kulim | 1,6 | 2000 | 200 | 250, 200, 180–90 | 46.000 | CMOS, HV, MEMS, RF, lógica, analógica, señal de mezcla |
Fábrica de semiconductores de Pyongyang | 111 Fábrica | Corea del Norte , Pyongyang | Decenio de 1980 | 3000 [337] | ||||
Kim Il-sung Fab [337] | Il-sung | Corea del Norte , Pyongyang | 1965 | 76 | 14/22 [337] [ verificación fallida ] | 25000–55000 | OLED , sensores, DRAM, SRAM, CMOS, fotodiodos, IGBT, MOSFET, MEMS | |
DongbuHiTek | Fabuloso 1 | Corea del Sur , Bucheon [1] | 1997 [1] | Fundición | ||||
DongbuHiTek | Fabuloso 2 | Corea del Sur , Eumsung-Kun [1] | 2001 [1] | Fundición | ||||
DongbuHiTek | Fab 2 Módulo 2 | Corea del Sur , Eumsung-Kun [1] | Fundición | |||||
Grupo Kodenshi AUK [338] | Línea Silicon FAB | |||||||
Grupo Kodenshi AUK [338] | Línea FAB compuesta | |||||||
Kyocera | Dispositivos SAW [138] | |||||||
Instrumentos Seiko [339] | porcelana , Shanghái | |||||||
Instrumentos Seiko [339] | Japón , Akita | |||||||
Instrumentos Seiko [339] | Japón , Takatsuka | |||||||
CIRCUITOS DE PRECISIÓN NIPPON [65] | Digital | |||||||
Epson [340] | Ala T | Japón , Sakata | 1997 | 200 | 150–350 | 25.000 | ||
Epson [340] | Balancearse | Japón , Sakata | 1991 | 150 | 350-1200 | 20.000 | ||
Olympus Corporation [341] | Nagano | Japón , Prefectura de Nagano | MEMS [342] | |||||
Olimpo | Japón | MEMS [343] | ||||||
Fabricación de Shindengen Electric [344] | Filipinas , Laguna | |||||||
Fabricación de Shindengen Electric [344] | Tailandia , Lumphun | |||||||
Participaciones de NKK JFE [65] | 200 | 6000 | , | |||||
Nueva radio de Japón | Obras de Kawagoe | Japón , Prefectura de Saitama, ciudad de Fujimino [345] [346] | 1959 [65] | 100, 150 | 4000, 400, 350 | Bipolar, señal mixta, analógico, BiCMOS de alta velocidad, BCD, bipolar complementario de alta velocidad de 40 V , CMOS analógico + HV , Filtros SAW [347] | ||
Nueva radio de Japón | Saga Electronics [348] | Japón , Prefectura de Saga | 100, 150 | 4000, 400, 350 [349] | Fundición, Bipolar, Señal mixta, Analógico, BiCMOS de alta velocidad , BCD, Bipolar complementario de alta velocidad de 40 V , CMOS analógico + HV , Filtros SAW [347] | |||
Nueva radio de Japón | NJR FUKUOKA | Japón , Prefectura de Fukuoka, ciudad de Fukuoka [348] | 2003 [350] | 100, 150 | Circuitos integrados bipolares, analógicos, MOSFET LSI, circuitos integrados BiCMOS | |||
Nueva radio de Japón | Japón , Nagano, Ciudad de Nagano [351] | |||||||
Nueva radio de Japón | Japón , Nagano, ciudad de Ueda [351] | |||||||
Nichia | CENTRO DE TECNOLOGÍA DE YOKOHAMA [352] | Japón , KANAGAWA | LED | |||||
Nichia | CENTRO DE TECNOLOGÍA SUWA [352] | Japón , NAGANO | LED | |||||
AKM Semiconductor, Inc. | FAB1 | Japón , Nobeoka | Sensores | |||||
AKM Semiconductor, Inc. | FAB2 | Japón , Nobeoka | ||||||
AKM Semiconductor, Inc. | FAB3 | Japón , Fuji | Sensores | |||||
AKM Semiconductor, Inc. | FAB FP | Japón , Hyuga | ||||||
AKM Semiconductor, Inc. | FAB5 | Japón , Ishinomaki | LSI | |||||
Taiyo Yuden | Japón , Nagano | Dispositivos SAW [138] | ||||||
Taiyo Yuden | Japón , Ome | Dispositivos SAW [138] | ||||||
SEMICONDUCTOR NMB [65] | DRACMA | |||||||
Elmos Semiconductor | Alemania , Dortmund [353] | 1984 | 200 | 800, 350 | 9000 | HV-CMOS | ||
Semiconductores monolíticos unidos [354] | Alemania , Ulm | 100 | 700, 250, 150, 100 | Fundición, FEOL , MMIC , GaAs pHEMT , InGaP , GaN HEMT, MESFET , diodo Schottky | ||||
Semiconductores monolíticos unidos [354] | Francia , Yvette | 100 | Fundición, BEOL | |||||
Implante de iones innovador | Francia | 51–300 [355] | ||||||
Implante de iones innovador | Reino Unido | 51–300 [355] | ||||||
nanoPHAB | Países Bajos , Eindhoven | 50-100 | 10–50 | 2-10 | MEMS | |||
Micron Semiconductor Ltd. [356] | Lanzamiento | Reino Unido , West Sussex, Lancing | Detectores | |||||
Pragmático | FlexLogIC 001 | Reino Unido , Condado de Durham | 2018 | 200 | 800–320 | Semiconductor flexible / Fundición e IDM | ||
CSTG | Reino Unido , Escocia, Glasgow [1] [357] | 2003 [1] | 76, 100 | InP, GaAs, AlAs , AlAsSb, GaSb , GaN, InGaN, AlN , diodos, LED, láseres, PIC, amplificadores ópticos , fundición | ||||
Photonix | Reino Unido , Escocia, Glasgow [1] | 0,011 | 2000 [1] | |||||
Microsistemas Silex | Suecia , Järfälla [1] | 0,009, 0,032 | 2003, 2009 [1] | |||||
Integral | Bielorrusia , Minsk | 1963 | 100, 150, 200 | 2000, 1500 , 350 | ||||
Crocus Nano Electronics | CNE | Rusia , Moscú | 2015 | 300 | sesenta y cinco | 4000 | MRAM , RRAM , MEMS, IPD , TMR , GMR Sensores, fundición | |
Mikron | Rusia , Zelenograd | 65–180 | ||||||
VSP Mikron | WaferFab [358] | Rusia , Voronezh | 1959 | 100/150 | 900+ | 6000 | Analógico, potencia |
Número de fábricas abiertas enumeradas actualmente aquí: 531
(NOTA: Algunas fábricas ubicadas en Asia no usan el número 4, o cualquier número de 2 dígitos que sume 4, porque se considera de mala suerte; consulte tetrafobia ).
Plantas cerradas
Las fábricas desaparecidas incluyen:
Empresa | Nombre de planta | Ubicación de la planta | Costo de la planta (en miles de millones de dólares estadounidenses ) | Producción iniciada | Tamaño de la oblea (mm) | Nodo de tecnología de proceso ( nm ) | Capacidad de producción (obleas / mes) | Tecnología / Productos | Producción terminada |
---|---|---|---|---|---|---|---|---|---|
Unión Soviética | Júpiter | Ucrania , Kiev , Pripiat | 1980 | Fábrica secreta de semiconductores del gobierno cerrada por desastre de Chernobyl | 1996 | ||||
Tower Semiconductor (anteriormente Micron ) | Fantástico 4 [359] | Japón , Ciudad de Nishiwaki | 0,450 [1] | 1992 [1] | 200 | 95 | 60.000 [1] | DRAM, fundición | 2014 |
Semiconductor de torre - Tacoma | porcelana , Nanjing [360] [361] | suspendido, quiebra en junio de 2020 [362] | 200, 300 (planificado) | Fundición | 2020 | ||||
Fujian Jinhua (JHICC) [7] [363] [364] [365] | F2 | porcelana , Jinjiang | 5,65 [366] | 2018 (planificado) | 300 | 22 | 60.000 | DRAM [6] | 2018 |
Decoma [7] | F2 | porcelana , Huaian | Bajo construcción | 300 | 20.000 | 2020 | |||
Fabricación de semiconductores de Wuhan Hongxin (HSMC) [367] | porcelana , Wuhan | 2019 (detenido) | 300 | 14, 7 | Fundición | 2020 | |||
Tsinghua Unigroup - Unigroup Guoxin (Unigroup, Xi'an UniIC Semiconductors Co., Ltd.) [7] | SZ | porcelana , Shenzhen | 12,5 | Planificado | 300 | 50.000 | DRACMA | 2019 (solo planificar) | |
TSMC | Fabuloso 1 [202] | Taiwán , Hsinchu | 1987 | 150 | 20.000 | Fundición | 9 de marzo de 2001 | ||
UMC | Fabuloso 1 | Japón , Tateyama | 0.543 [1] | 1997 [1] | 200 | 40.000 | Fundición | 2012 | |
SK Hynix | E-4 | EE.UU , O, Eugene | 1.3 | 2007 | 200 | 30.000 | DRACMA | 2008 [368] | |
Symetrix: Panasonic [369] | Brasil | 0,9 (planificado) | planificado | FeRAM | (solo planifica) | ||||
Rohm (anteriormente Data General ) | EE.UU , CA, Sunnyvale [370] | ||||||||
Kioxia | Fab 1 (en las operaciones de Yokkaichi) [371] | Japón , Yokkaichi | 1992 | 200 | 400 | 35.000 | SRAM, DRAM | Septiembre de 2001 | |
Comité ejecutivo nacional | Livingston [372] | Reino Unido , Escocia, West Lothian, Livingston | 4.5 (total) | 1981 | 200 | 250, 180 | 30.000 | DRACMA | Abril de 2001 |
LFoundry | (anteriormente Renesas Electronics ) [373]Alemania , Landshut | 1992 | 200 | 2011 | |||||
LFoundry (anteriormente Atmel ) [374] | Francia , Rousset | ? | 200 | 25.000 [375] | 2014 | ||||
EI Niš | Ei Poluprovodnici | Serbia , Niš | 1962 | 100 | 2000 | ||||
Plessey Semiconductors (antes Plus Semi) (antes MHS Electronics) (antes Zarlink ) (antes Mitel ) (antes Plessey Semiconductors ) | Reino Unido , Swindon [1] | ||||||||
Semiconductores Telefunken | Heilbronn, HNO-Line | Alemania , Heilbronn | 0,125 [1] | 1993 [1] | 150 | 10,000 | 2015 | ||
Qimonda | Richmond [376] | EE.UU , VA, Richmond | 3 | 2005 | 300 | sesenta y cinco | 38.000 | DRACMA | Enero de 2009 |
STMicroelectronics (anteriormente Nortel [65] ) | 100, 150 | NMOS, CMOS | |||||||
Freescale Semiconductor (anteriormente Motorola ) | Toulouse Fab [377] | Francia , Toulouse | 1969 | 150 | 650 | Automotor | 2012 [378] | ||
Freescale Semiconductor (anteriormente Motorola ) (anteriormente Tohoku Semiconductor) | Sendai Fab [379] | Japón , Sendai | 1987 | 150, 200 | 500 | DRAM, microcontroladores, analógicos, sensores | 2009? | ||
Agere (antes Lucent ) (antes AT&T ) [380] | España , Madrid, Tres Cantos | 0,67 [381] | 1987 [382] | 300, 350, 500 | CMOS | 2001 | |||
GMT Microelectronics (anteriormente Commodore Semiconductor) (anteriormente MOS Technology ) | EE.UU , PA, Audubon | 1969 1976 1995 | 1000 | 1976 1992 [383] 2001 | |||||
Tecnología de dispositivo integrada | EE.UU , CA, Salinas | 1985 | 150 | 350–800 [130] | 2002 | ||||
ON Semiconductor (anteriormente Cherry Semiconductor) | EE.UU , RI, Cranston | 2004 | |||||||
Intel | Fabuloso 8 [36] | Israel , Jerusalén | 1985 | 150 | Microprocesadores , conjuntos de chips , microcontroladores [37] | 2007 | |||
Intel | Fab D2 | EE.UU , CA, Santa Clara | 1989 | 200 | 130 | 8.000 | Microprocesadores, chipsets, memoria flash | 2009 | |
Intel | Fab 17 [27] [26] | EE.UU , MA, Hudson | 1998 | 200 | 130 | Chipsets y otros [26] | 2014 | ||
Fairchild Semiconductor (anteriormente National Semiconductor ) | West Jordan | EE.UU , UT, West Jordan | 1977 | 150 | 2015 [384] | ||||
Instrumentos Texas | HFAB | EE.UU , TX, Houston | 1967 | 150 | 2013 [385] | ||||
Texas Instruments (anteriormente Silicon Systems ) | Santa Cruz | EE.UU , CA, Santa Cruz | 0,250 | 1980 | 150 | 800 | 80.000 | HDD | 2001 |
Texas Instruments (anteriormente National Semiconductor ) | Arlington | EE.UU , TX, Arlington | 1985 | 150 | 80000, 35000 | 2010 | |||
Desconocido (compañía Fortune 500) | EE.UU , Costa Este [386] | 150 | 1600 | MEMS | 2016 | ||||
Diodes Incorporated (anteriormente Lite-On Power Semiconductor ) (anteriormente AT&T ) | KFAB | EE.UU , MO, Lee's Summit | 1994 [387] | 130 | 2017 [388] | ||||
Qorvo (anteriormente TriQuint Semiconductor ) (anteriormente Sawtek) | EE.UU , FL, Apopka [42] [389] | Filtros SAW | 2019 | ||||||
GlobalFoundries | Abu Dabi [1] | Emiratos Árabes Unidos , Abu Dabi [1] | 6.8 [1] (planificado) | 2016 [1] (planificado) | 300 | 110 –180 | 45.000 | Fundición | 2011 (plan detenido) |
GlobalFoundries - Chengdu | porcelana , Chengdu [390] | 10 (planeado) | 2018 (planificado), 2019 (segunda fase) | 300 | 180 / 130 (cancelado), 22 (segunda fase) | 20.000 (85.000 planeados) | Fundición, FDSOI (segunda fase) | 2020 (estaba inactivo) |
Número de fábricas cerradas enumeradas actualmente aquí: 40
Ver también
- Fabricación de dispositivos semiconductores
Referencias
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enlaces externos
- The IC Foundry Almanac. 2009 edition. Section III: IC Foundry providers[dead link] // IC Insights, Global Semiconductor Alliance, 2009
- Memory and Foundry Account For More Than Half of Worldwide IC Capacity // IC Insights, Global Semiconductor Alliance, 2013-07-09
- SEMI World Fab Forecast 2013 // SEMI, 2013
- Worldwide Location of Wafer Fabs – Interactive Map